IXTA1N120P

IXYS

Product No:

IXTA1N120P

Manufacturer:

Package:

TO-263AA

Batch:

Datasheet:

Description:

MOSFET N-CH 1200V 1A TO263

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	17.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 50µA
Supplier Device Package	TO-263AA
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	63W (Tc)
Series	Polar
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTA1