IXTN210P10T

IXYS

Product No:

IXTN210P10T

Manufacturer:

Package:

SOT-227B

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Description:

MOSFET P-CH 100V 210A SOT227B

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	69500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	740 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	7.5mOhm @ 105A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	SOT-227B
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	830W (Tc)
Series	TrenchP™
Package / Case	SOT-227-4, miniBLOC
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	210A (Tc)
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTN210