IXTQ18N60P

IXYS

Product No:

IXTQ18N60P

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Package:

TO-3P

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Description:

MOSFET N-CH 600V 18A TO3P

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	420mOhm @ 9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5.5V @ 250µA
Supplier Device Package	TO-3P
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	360W (Tc)
Series	Polar
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTQ18