MSCSM120DAM31CTBL1NG

Microchip Technology

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PM-MOSFET-SIC-SBD-BL1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3020 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	232 nC @ 20 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	31mOhm @ 40A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 1mA
Supplier Device Package	-
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	310W
Series	-
Package / Case	Module
Technology	SiCFET (Silicon Carbide)
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	79A
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Bulk
Base Product Number	MSCSM120