NDB5060L

Fairchild Semiconductor

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NDB5060L

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D²PAK (TO-263)

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Description:

POWER FIELD-EFFECT TRANSISTOR, 2

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Operating Temperature	-65°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	840 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	35mOhm @ 13A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	D²PAK (TO-263)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	68W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Bulk