NDD60N745U1-1G

onsemi

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NDD60N745U1-1G

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I-PAK

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Description:

NDD60N745 - POWER MOSFET 600V 6.

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	745mOhm @ 3.25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	84W (Tc)
Series	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	6.6A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk