NP110N055PUJ-E1B-AY

Renesas

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NP110N055PUJ-E1B-AY

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Package:

TO-263-3

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NP110N055PUJ-E1B-AY - SWITCHINGN

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.4mOhm @ 55A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263-3
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	1.8W (Ta), 288W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Renesas
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk