NTC080N120SC1

onsemi

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NTC080N120SC1

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Die

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SIC MOS WAFER SALES 80MOHM 1200V

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1112 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 20 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	110mOhm @ 20A, 20V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.3V @ 5mA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	178W (Tc)
Series	-
Package / Case	Die
Technology	SiCFET (Silicon Carbide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Vgs (Max)	+25V, -15V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tray