NTD3813N-1G

onsemi

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NTD3813N-1G

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Package:

I-PAK

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Description:

MOSFET N-CH 16V 9.6A/51A IPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	963 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	12.8 nC @ 4.5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8.75mOhm @ 15A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	16 V
Power Dissipation (Max)	1.2W (Ta), 34.9W (Tc)
Series	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	9.6A (Ta), 51A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	NTD38