NTD4865N-1G

onsemi

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NTD4865N-1G

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Package:

I-PAK

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Description:

MOSFET N-CH 25V 8.5A/44A IPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	827 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	10.8 nC @ 4.5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	10.9mOhm @ 30A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	1.27W (Ta), 33.3W (Tc)
Series	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	8.5A (Ta), 44A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	NTD48