onsemi
Product No:
NTH4L060N090SC1
Manufacturer:
Package:
TO-247-4L
Batch:
-
Description:
SILICON CARBIDE MOSFET, NCHANNEL
Quantity:
Delivery:
Payment:
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 450 V |
Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 15 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 43mOhm @ 20A, 18V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.3V @ 5mA |
Supplier Device Package | TO-247-4L |
Drain to Source Voltage (Vdss) | 900 V |
Power Dissipation (Max) | 221W (Tc) |
Series | - |
Package / Case | TO-247-4 |
Technology | SiCFET (Silicon Carbide) |
Mfr | onsemi |
Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
Vgs (Max) | +22V, -8V |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Package | Tube |