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NTH4L060N090SC1

onsemi

Product No:

NTH4L060N090SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Batch:

-

Datasheet:

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Description:

SILICON CARBIDE MOSFET, NCHANNEL

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 15 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 43mOhm @ 20A, 18V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 5mA
Supplier Device Package TO-247-4L
Drain to Source Voltage (Vdss) 900 V
Power Dissipation (Max) 221W (Tc)
Series -
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Mfr onsemi
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Vgs (Max) +22V, -8V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tube