NTHS4111PT1G

onsemi

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NTHS4111PT1G

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ChipFET™

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Description:

MOSFET P-CH 30V 3.3A CHIPFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	45mOhm @ 4.4A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	ChipFET™
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	700mW (Ta)
Series	-
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	3.3A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NTHS41