NTLJF3118NTAG

onsemi

Product No:

NTLJF3118NTAG

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Package:

6-WDFN (2x2)

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Description:

MOSFET N-CH 20V 2.6A 6WDFN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	271 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	3.7 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	65mOhm @ 3.8A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	6-WDFN (2x2)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	700mW (Ta)
Series	-
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	NTLJF31