NTLJF4156NT1G

Rochester Electronics, LLC

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NTLJF4156NT1G

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6-WDFN (2x2)

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NTLJF4156N - POWER MOSFET, N-CHA

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	427 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	70mOhm @ 2A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	6-WDFN (2x2)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	710mW (Ta)
Series	-
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Rochester Electronics, LLC
Current - Continuous Drain (Id) @ 25°C	2.5A (Tj)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Bulk