NTMTSC1D6N10MCTXG

onsemi

Product No:

NTMTSC1D6N10MCTXG

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Package:

8-TDFNW (8.3x8.4)

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Description:

MOSFET N-CH 100V 35A/267A 8TDFNW

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7630 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 10 V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	1.7mOhm @ 90A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 650µA
Supplier Device Package	8-TDFNW (8.3x8.4)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	5.1W (Ta), 291W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	35A (Ta), 267A (Tc)
Vgs (Max)	±20V
Package	Tape & Reel (TR)
Base Product Number	NTMTSC1