NTTFSS1D1N02P1E

onsemi

Product No:

NTTFSS1D1N02P1E

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Package:

9-WDFN (3.3x3.3)

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Description:

25V PT11E IN 3X3 SD PACKAGE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4360 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.85mOhm @ 27A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 934µA
Supplier Device Package	9-WDFN (3.3x3.3)
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	2W (Ta), 89W (Tc)
Series	-
Package / Case	9-PowerWDFN
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	39A (Ta), 264A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NTTFSS1