NVD5802NT4G-TB01

onsemi

Product No:

NVD5802NT4G-TB01

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Package:

DPAK

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Description:

MOSFET N-CH 40V 16.4A/101A DPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5300 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.4mOhm @ 50A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 250µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	2.5W (Ta), 93.75W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	16.4A (Ta), 101A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NVD580