NVH4L060N065SC1

onsemi

Product No:

NVH4L060N065SC1

Manufacturer:

Package:

TO-247-4L

Batch:

Datasheet:

Description:

SIC MOS TO247-4L 650V

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1473 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	70mOhm @ 20A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 6.5mA
Supplier Device Package	TO-247-4L
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	176W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube
Base Product Number	NVH4L060