NVMJST2D6N08HTXG

onsemi

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NVMJST2D6N08HTXG

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Package:

10-TCPAK

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Description:

TRENCH 8 80V LFPAK 5X7

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4405 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.8mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	10-TCPAK
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	5.3W (Ta), 116W (Tc)
Series	Automotive, AEC-Q101
Package / Case	10-PowerLSOP (0.209", 5.30mm Width) Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	28A (Ta), 131.5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)