NXV65UPR

Nexperia USA Inc.

Product No:

NXV65UPR

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Package:

TO-236AB

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Description:

NXV65UP/SOT23/TO-236AB

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	458 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	8.7 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	70mOhm @ 2.1A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	TO-236AB
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	340mW (Ta), 2.1W (Tc)
Series	TrenchMOS™
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	2.1A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)