PJD8NA65A_L2_00001

Panjit International Inc.

Product No:

PJD8NA65A_L2_00001

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Package:

TO-252

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Description:

650V N-CHANNEL MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1245 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.2Ohm @ 3.75A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	140W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C	7.5A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	PJD8N