PJQ5412_R2_00001

Panjit International Inc.

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PJQ5412_R2_00001

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Package:

DFN5060-8

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Description:

30V N-CHANNEL ENHANCEMENT MODE M

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	7.1 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	DFN5060-8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2W (Ta), 40W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 45A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PJQ5412