PJQ5850_R2_00001

Panjit International Inc.

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PJQ5850_R2_00001

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Package:

DFN5060B-8

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Description:

40V DUAL N-CHANNEL ENHANCEMENT M

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	4.4nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	33mOhm @ 8A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	DFN5060B-8
Drain to Source Voltage (Vdss)	40V
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Power - Max	1.7W (Ta), 12W (Tc)
Mfr	Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C	5A (Ta), 14A (Tc)
Package	Tape & Reel (TR)
Base Product Number	PJQ5850