PJW5N10A_R2_00001

Panjit International Inc.

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PJW5N10A_R2_00001

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Package:

SOT-223

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Description:

100V N-CHANNEL ENHANCEMENT MODE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1413 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	115mOhm @ 4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.1W (Ta), 5.2W (Tc)
Series	-
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta), 5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PJW5N10