PMCXB900UEZ

NXP Semiconductors

Product No:

PMCXB900UEZ

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Package:

DFN1010B-6

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Description:

20 V, COMPLEMENTARY N/P-CHANNEL

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel Complementary
Input Capacitance (Ciss) (Max) @ Vds	21.3pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	0.7nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	620mOhm @ 600mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	950mV @ 250µA
Supplier Device Package	DFN1010B-6
Drain to Source Voltage (Vdss)	20V
Series	TrenchFET®
Package / Case	6-XFDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Power - Max	265mW
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	600mA, 500mA
Package	Bulk
Base Product Number	PMCXB900