PMDXB550UNE/S500Z

NXP Semiconductors

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PMDXB550UNE/S500Z

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DFN1010B-6

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Description:

PMDXB550UNE - N Channel MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Standard
Configuration	2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds	30.3pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	1.05nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	670mOhm @ 590mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	0.95V @ 250µA
Supplier Device Package	DFN1010B-6
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	6-XFDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Power - Max	285mW (Ta), 4.03W (Tc)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	590mA (Ta)
Package	Bulk