PMPB16R5XNEX

Nexperia USA Inc.

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PMPB16R5XNEX

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Package:

DFN2020M-6

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PMPB16R5XNE - 30 V, N-CHANNEL TR

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	19mOhm @ 4.5A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	DFN2020M-6
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.7W (Ta), 12.5W (Tc)
Series	TrenchMOS™
Package / Case	6-UDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)