PMV65XP/MIR

Nexperia USA Inc.

Product No:

PMV65XP/MIR

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Package:

TO-236AB

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Description:

MOSFET P-CH 20V 2.8A TO236AB

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	744 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	7.7 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	74mOhm @ 2.8A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	TO-236AB
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	480mW (Ta), 4.17W (Tc)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	2.8A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)