PSMN2R1-30YLEX

Nexperia USA Inc.

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PSMN2R1-30YLEX

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Package:

LFPAK56, Power-SO8

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Description:

PSMN2R1-30YLE/SOT669/LFPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3749 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.17mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 1mA
Supplier Device Package	LFPAK56, Power-SO8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	124W (Ta)
Series	-
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	160A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)