PSMN8R9-100BSEJ

Nexperia USA Inc.

Product No:

PSMN8R9-100BSEJ

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Package:

D2PAK

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Description:

MOSFET N-CH 100V 108A D2PAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9488 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10mOhm @ 25A, 1V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	D2PAK
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	296W (Ta)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	75A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	PSMN8R9