PXN7R7-25QLJ

Nexperia USA Inc.

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PXN7R7-25QLJ

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Package:

MLPAK33

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PXN7R7-25QL/SOT8002/MLPAK33

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	770 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs	16.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7.7mOhm @ 11.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	MLPAK33
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	1.7W (Ta), 12.5W (Tc)
Series	TrenchMOS™
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	11.8A (Ta), 32A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)