PXP9R1-30QLJ

Nexperia USA Inc.

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PXP9R1-30QLJ

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Package:

MLPAK33

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PXP9R1-30QL/SOT8002/MLPAK33

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9.1mOhm @ 10.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	MLPAK33
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.8W (Ta), 50W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	10.9A (Ta), 57.2A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)