QS8M12TCR

Rohm Semiconductor

Product No:

QS8M12TCR

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Package:

TSMT8

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Description:

MOSFET N/P-CH 30V 4A TSMT8

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Operating Temperature	150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	3.4nC @ 5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	42mOhm @ 4A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	TSMT8
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Power - Max	1.5W
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	4A
Package	Tape & Reel (TR)
Base Product Number	QS8M12