RN1112MFV,L3F

Toshiba Semiconductor and Storage

Product No:

RN1112MFV,L3F

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Package:

VESM

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Description:

TRANS PREBIAS NPN 50V 0.1A VESM

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Current - Collector (Ic) (Max)	100 mA
Resistor - Base (R1)	22 kOhms
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	VESM
Series	-
Transistor Type	NPN - Pre-Biased
Package / Case	SOT-723
Power - Max	150 mW
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Base Product Number	RN1112