STD3NM60-1

STMicroelectronics

Product No:

STD3NM60-1

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Package:

I-PAK

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Description:

MOSFET N-CH 600V 3A IPAK

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Operating Temperature	-65°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	324 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	42W (Tc)
Series	MDmesh™
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STD3N