TN2130MF-G-VAO

Microchip Technology

Product No:

TN2130MF-G-VAO

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Package:

6-DFN (2x2)

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Description:

MOSFET, N-CHANNEL ENHANCEMENT-MO

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Operating Temperature	-55°C ~ 150°C (TA)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 25 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	25Ohm @ 120mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 1mA
Supplier Device Package	6-DFN (2x2)
Drain to Source Voltage (Vdss)	300 V
Power Dissipation (Max)	360mW (Ta)
Series	-
Package / Case	6-VDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	85mA (Tj)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Package	Tape & Reel (TR)
Base Product Number	TN2130