TQM130NB06CR RLG

Taiwan Semiconductor Corporation

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TQM130NB06CR RLG

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8-PDFNU (5x6)

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Description:

MOSFET N-CH 60V 10A/50A 8PDFNU

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2234 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	13mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 250µA
Supplier Device Package	8-PDFNU (5x6)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	3.1W (Ta), 83W (Tc)
Series	Automotive, AEC-Q101
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 50A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)
Base Product Number	TQM130