TSM110NB04LCV

Taiwan Semiconductor Corporation

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TSM110NB04LCV

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Package:

8-PDFN (3.15x3.1)

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Description:

40V, 44A, SINGLE N-CHANNEL POWER

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1329 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	11mOhm @ 9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-PDFN (3.15x3.1)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	1.9W (Ta), 42W (Tc)
Series	-
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 44A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TSM110