TSM180N03PQ33 RGG

Taiwan Semiconductor Corporation

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TSM180N03PQ33 RGG

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Package:

8-PDFN (3.1x3.08)

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Description:

MOSFET N-CH 30V 25A 8PDFN

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	345 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	4.1 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	18mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-PDFN (3.1x3.08)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	21W (Tc)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TSM180