TSM1NB60CW RPG

Taiwan Semiconductor Corporation

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TSM1NB60CW RPG

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Package:

SOT-223

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Description:

MOSFET N-CHANNEL 600V 1A SOT223

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	138 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	39W (Tc)
Series	-
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TSM1NB60