TSM4NB65CH C5G

Taiwan Semiconductor Corporation

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TSM4NB65CH C5G

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Package:

TO-251 (IPAK)

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Description:

MOSFET N-CHANNEL 650V 4A TO251

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	549 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	13.46 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.37Ohm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	TO-251 (IPAK)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	70W (Tc)
Series	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM4NB65