TSM650N15CS RLG

Taiwan Semiconductor Corporation

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TSM650N15CS RLG

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Package:

8-SOP

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Description:

MOSFET N-CHANNEL 150V 9A 8SOP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1783 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	65mOhm @ 4A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	8-SOP
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	12.5W (Tc)
Series	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	TSM650