TSM680P06CZ C0G

Taiwan Semiconductor Corporation

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TSM680P06CZ C0G

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Package:

TO-220

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Description:

MOSFET P-CH 60V 18A TO220

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	870 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	16.4 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	68mOhm @ 6A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	42W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk