TSM80N1R2CL C0G

Taiwan Semiconductor Corporation

Product No:

TSM80N1R2CL C0G

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Package:

TO-262S (I2PAK)

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Description:

MOSFET N-CH 800V 5.5A TO262S

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	685 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	19.4 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.2Ohm @ 1.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-262S (I2PAK)
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	110W (Tc)
Series	-
Package / Case	TO-262-3 Short Leads, I²Pak
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM80