TSM850N06CX

Taiwan Semiconductor Corporation

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TSM850N06CX

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Package:

SOT-23

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Description:

60V, 3A, SINGLE N-CHANNEL POWER

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	529 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	9.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	85mOhm @ 2.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-23
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta), 3A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TSM850