XP10N3R8P

XSemi Corporation

Product No:

XP10N3R8P

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Package:

TO-220

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Description:

MOSFET N-CH 100V 48.5A TO-252

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6560 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs	136 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.88mOhm @ 60A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2W (Ta), 125W (Tc)
Series	XP10N3R8
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	XSemi Corporation
Current - Continuous Drain (Id) @ 25°C	130A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube