2SJ358-T1-AZ

Renesas

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2SJ358-T1-AZ

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MP-2

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2SJ358-T1-AZ - P-CHANNEL MOS FET

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	23.9 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	300mOhm @ 1.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	MP-2
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	2W (Ta)
Series	-
Package / Case	TO-243AA
Technology	MOSFET (Metal Oxide)
Mfr	Renesas
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Vgs (Max)	+10V, -20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Bulk