2SK1954-Z-E1-AZ

Renesas

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2SK1954-Z-E1-AZ

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Package:

MP-3Z

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Description:

2SK1954-Z - Silicon N Channel MO

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	650mOhm @ 2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	MP-3Z
Drain to Source Voltage (Vdss)	180 V
Power Dissipation (Max)	1W (Ta), 20W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Renesas
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk