2SK2729-E

Renesas Electronics America Inc

Product No:

2SK2729-E

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Package:

TO-3P

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Description:

MOSFET N-CH 500V 20A TO3P

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	290mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1mA
Supplier Device Package	TO-3P
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	150W (Ta)
Series	-
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Vgs (Max)	±30V
Package	Bulk