EPC
Product No:
EPC2202
Manufacturer:
Package:
Die
Batch:
-
Description:
GANFET N-CH 80V 18A DIE
Quantity:
Delivery:
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Operating Temperature | -40°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 415 pF @ 50 V |
Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 5 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 17mOhm @ 11A, 5V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 3mA |
Supplier Device Package | Die |
Drain to Source Voltage (Vdss) | 80 V |
Power Dissipation (Max) | - |
Series | Automotive, AEC-Q101, eGaN® |
Package / Case | Die |
Technology | GaNFET (Gallium Nitride) |
Mfr | EPC |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
Vgs (Max) | +5.75V, -4V |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Package | Tape & Reel (TR) |